Hybrid-pi model/Related Articles: Difference between revisions
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{{r|Bipolar transistor}} | |||
{{r|MOSFET}} | {{r|MOSFET}} | ||
{{r|Two-port network}} | {{r|Two-port network}} | ||
==Subtopics== | ==Subtopics== | ||
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==Other related topics== | ==Other related topics== | ||
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{{r|Miller effect}} | |||
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Latest revision as of 11:30, 1 July 2011
- See also changes related to Hybrid-pi model, or pages that link to Hybrid-pi model or to this page or whose text contains "Hybrid-pi model".
Parent topics
- Bipolar transistor [r]: A three-terminal semiconductor device used for switching and amplification. [e]
- MOSFET [r]: A type of field-effect transistor with four electrical contacts and three layers: a metal top layer (connected to the gate contact),separated by an insulating layer (usually an oxide layer) from a semiconductor layer (connected to the body contact). The gate voltage switches "on" and "off" the electrical connection between a source and drain contact at the semiconductor surface. [e]
- Two-port network [r]: An electrical network with two ports, useful for simplifying linear electrical circuits [e]
Subtopics
- Miller effect [r]: The increase in the equivalent input capacitance of an inverting voltage amplifier due to a capacitance connected between two gain-related nodes. [e]
- Mode (electronics) [r]: A range of operation of an electrical device set by its bias condition or, when no signals are present, its quiescent or operating point. [e]