Indium gallium arsenide/Definition

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Revision as of 01:07, 13 March 2011 by imported>Howard C. Berkowitz (New page: <noinclude>{{Subpages}}</noinclude> (InGaAs) Semiconductor substrate for infrared light detectors in the 700nm to 1.8µm near infrared band)
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Indium gallium arsenide [r]: (InGaAs) Semiconductor substrate for infrared light detectors in the 700nm to 1.8µm near infrared band

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