Metal-oxide-semiconductor field-effect transistor/Related Articles: Difference between revisions
Jump to navigation
Jump to search
imported>John R. Brews (Transferred) |
imported>John R. Brews (→Other related topics: add a couple) |
||
| Line 20: | Line 20: | ||
{{r|Semiconductor}} | {{r|Semiconductor}} | ||
{{r|Electronic band structure}} | {{r|Electronic band structure}} | ||
{{r|Fermi function}} | |||
{{r|Semiconductor diode}} | |||
Revision as of 11:11, 16 January 2011
- See also changes related to Metal-oxide-semiconductor field-effect transistor, or pages that link to Metal-oxide-semiconductor field-effect transistor or to this page or whose text contains "Metal-oxide-semiconductor field-effect transistor".
Parent topics
- Transistor [r]: A semiconductor device that allows a signal at its input terminal(s) (usually a current or a voltage) to control an output signal at its output terminal(s), acting either as a switch activated by the input signal or as an amplifier for the input signal. [e]
Subtopics
- Semiconductor [r]: A substance (usually a solid) with electrical conductivity intermediate between metals and insulators. [e]
- Electronic band structure [r]: The very closely spaced energy levels available to electrons in solids, which are separated from each other by energy gaps. [e]
- Fermi function [r]: The equilibrium occupancy of an energy level in a system of independent fermions at a fixed temperature. [e]
- Semiconductor diode [r]: Two-terminal device that conducts current in only one direction, made of two or more layers of material, of which at least one is a semiconductor. [e]