User:John R. Brews/Devices

Devices

Devices

(PD) Image: John R. Brews Mesa diode structure (top) and planar diode structure with guard-ring (bottom).     (PD) Image: John R. Brews A planar bipolar junction transistor as might be constructed in a integrated circuit.     (PD) Image: John R. Brews Gummel plot and current gain for a GaAs/AlGaAs heterostructure bipolar transistor.     (PD) Image: John R. Brews Quasi-Fermi levels and carrier densities in forward biased pn-diode.     (PD) Image: John R. Brews Cross section of MOS capacitor showing charge layers     (PD) Image: John R. Brews Three types of MOS capacitance vs. voltage curves. VTH = threshold, VFB = flatbands      (PD) Image: John R. Brews Small-signal equivalent circuit of the MOS capacitor in inversion with a single trap level     (PD) Image: John R. Brews A modern MOSFET     (PD) Image: John R. Brews A power MOSFET; source and body share a contact.     (PD) Image: John R. Brews Two bipolar transistor modes, showing extrapolation of asymptotes to the Early voltage.     (PD) Image: John R. Brews Channel length modulation in 3/4μm technology.     (PD) Image: John R. Brews Early voltage for MOSFETs from a 0.18μm process as a function of channel strength.     (CC) Image: John R. Brews Calculated density of states for crystalline silicon.     (CC) Image: John R. Brews Field effect: At a gate voltage above threshold a surface inversion layer of electrons forms at a semiconductor surface.     (PD) Image: John R. Brews Occupancy comparison between n-type, intrinsic and p-type semiconductors.     (PD) Image: John R. Brews Nonideal pn-diode current-voltage characteristics     (PD) Image: John R. Brews Band-bending diagram for pn-junction diode at zero applied voltage     (PD) Image: John R. Brews Band-bending for pn-diode in reverse bias     (PD) Image: John R. Brews Quasi-Fermi levels in reverse-biased pn-junction diode     (PD) Image: John R. Brews Band-bending diagram for pn-diode in forward bias     (PD) Image: John R. Brews Fermi occupancy function vs. energy departure from Fermi level in volts for three temperatures     (PD) Image: John R. Brews Fermi surface in k-space for a nearly filled band in the face-centered cubic lattice

More devices

More devices

(PD) Image: John R. Brews A constant energy surface in the silicon conduction band consists of six ellipsoids.     (PD) Image: John R. Brews Planar Schottky diode with n+-guard rings and tapered oxide.     (PD) Image: John R. Brews Comparison of Schottky and pn-diode current voltage curves.     (PD) Image: John R. Brews Schottky barrier formation on p-type semiconductor. Energies are in eV.     (PD) Image: John R. Brews Schottky diode under forward bias VF.     (PD) Image: John R. Brews Schottky diode under reverse bias VR.     (PD) Image: John R. Brews Critical electric field for breakdown versus bandgap energy in several materials.     (PD) Image: John R. Brews Schottky barrier height vs. metal electronegativity for some selected metals on n-type silicon.     (PD) Image: John R. Brews Theoretical dependence of Schottky barrier heights for diodes using p-SiC vs. electronegativity of the metal according to Mönch     (PD) Image: John R. Brews File:Three phase CCD. Top: illumination Bottom: Charge transfer

}}