File:Seimiconductor band bending.PNG: Difference between revisions
imported>John R. Brews ({{Image_Details|user-pd |description = Band bending under external field for p-type semiconductor |author = ~~~ |date-created = 2011-01-06 |pub-country = |notes = Top panel: Applied voltage depletes holes from surface Bottom panel: Larger applied voltage further depletes holes but conduction band becomes low enough in energy to populate an inversion layer |versions = }}) |
imported>John R. Brews No edit summary |
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|author = [[User:John R. Brews|John R. Brews]] | |author = [[User:John R. Brews|John R. Brews]] | ||
|date-created = 2011-01-06 | |date-created = 2011-01-06 | ||
|pub-country = | |pub-country = USA | ||
|notes = Top panel: Applied voltage depletes holes from surface Bottom panel: Larger applied voltage further depletes holes but conduction band becomes low enough in energy to populate an inversion layer | |notes = Top panel: Applied voltage depletes holes from surface Bottom panel: Larger applied voltage further depletes holes but conduction band becomes low enough in energy to populate an inversion layer | ||
|versions = | |versions = | ||
Revision as of 16:08, 6 January 2011
Summary
| Title / Description
|
Band bending under external field for p-type semiconductor |
|---|---|
| Citizendium author
|
John R. Brews |
| Date created
|
2011-01-06 |
| Country of first publication
|
USA |
| Notes
|
Top panel: Applied voltage depletes holes from surface Bottom panel: Larger applied voltage further depletes holes but conduction band becomes low enough in energy to populate an inversion layer |
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 19:52, 11 March 2022 |  | 1,221 × 937 (88 KB) | Maintenance script (talk | contribs) | == Summary == Importing file |
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